Datasheet Details
| Part number | 2SC4927 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4927-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4927.
| Part number | 2SC4927 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4927-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : VCES= 1500V(Min) ·Built-in damper diode type ·Isolated package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·TV/character display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ID C-E Diode Forward Current 8 A isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4927 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4927 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SC4927 | SILICON POWER TRANSISTOR | SavantIC |
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