2SC4953
DESCRIPTION
- Silicon NPN triple diffusion planar type
- High Speed Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high breakdown voltage high speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
℃
-55~150 ℃ isc Website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise...
