Datasheet Details
| Part number | 2SC4963 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4963-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4963.
| Part number | 2SC4963 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4963-INCHANGE.pdf |
|
|
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·High Breakdown Voltage ·High Switching Speed ·Built in damper diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 5.0 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4963 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
IB= 1.4A VBE(sat) Base-Emitter Saturation Voltage IC= 7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4963 | SILICON POWER TRANSISTOR | SavantIC |
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