Inchange Semiconductor 2SC4980
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min)●Collector Current-IC= 5A(Max.)
●Low Collector Saturation Voltage
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in drivers such as DC/DC converters and actuators.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICM Collector Current-Peak 10 IB Base Current-Continuous 1.5 IBM Base Current-Peak 2 PT Total Power Dissipation @ TC=25℃ 25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc Website: 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power TransistorsELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4980 MIN TYP.