Inchange Semiconductor 2SC5027
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC5027 |
|---|---|
| Datasheet | 2SC5027 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5027ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0 7 V BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0 800 V BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0 1100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A...