Datasheet Details
| Part number | 2SC5043 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.89 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5043-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5043.
| Part number | 2SC5043 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.89 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5043-INCHANGE.pdf |
|
|
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·NPN triple diffused planar silicon transistor ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 24 A 2 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5043 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5043 | NPN TRANSISTOR | Sanyo Semicon Device |
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|---|---|
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