Datasheet Details
| Part number | 2SC5124 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5124-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5124.
| Part number | 2SC5124 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5124-INCHANGE.pdf |
|
|
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·Silicon NPN diffused planar transistor ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for display horizontal deflection output Switching regulator and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5124 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=8A;
IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC=8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5124 | NPN TRANSISTOR | Sanken electric |
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2SC5124 | SILICON POWER TRANSISTOR | SavantIC |
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