Datasheet Details
| Part number | 2SC5128 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5128-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5128.
| Part number | 2SC5128 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5128-INCHANGE.pdf |
|
|
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·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding insulation, which can be in staled to the heat sink with one screw ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 3 A 40 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5128 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5128 | Silicon NPN Transistor | Panasonic Semiconductor |
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