Datasheet4U Logo Datasheet4U.com

2SC5150 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1700V (Min) High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color

📥 Download Datasheet

Datasheet preview – 2SC5150

Datasheet Details

Part number 2SC5150
Manufacturer INCHANGE
File Size 177.37 KB
Description NPN Transistor
Datasheet download datasheet 2SC5150 Datasheet
Additional preview pages of the 2SC5150 datasheet.

📁 Similar Datasheet

  • 2SC5150 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC515 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC5154 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC5155 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC510 - SILICON NPN TRANSISTOR (Toshiba)
  • 2SC5100 - NPN TRANSISTOR (Sanken electric)
  • 2SC5100 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC5101 - NPN TRANSISTOR (Sanken electric)
  • 2SC5101 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC5103 - High speed switching transistor (Rohm)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse 20 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconduc
Published: |