Datasheet4U Logo Datasheet4U.com

2SC5198 - NPN Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A Good Linearity of hFE Complement to Type 2SA1941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity

📥 Download Datasheet

Datasheet preview – 2SC5198

Datasheet Details

Part number 2SC5198
Manufacturer INCHANGE
File Size 213.89 KB
Description NPN Transistor
Datasheet download datasheet 2SC5198 Datasheet
Additional preview pages of the 2SC5198 datasheet.

📁 Similar Datasheet

  • 2SC5198 - NPN Transistor (Toshiba Semiconductor)
  • 2SC5198 - Silicon NPN Transistor (JILIN SINO)
  • 2SC5198 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC5198 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC5198B - Silicon NPN Transistor (NELL SEMICONDUCTOR)
  • 2SC5190 - NPN TRANSISTOR (Panasonic Semiconductor)
  • 2SC5191 - NPN TRANSISTOR (NEC)
  • 2SC5191 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SC5192 - NPN TRANSISTOR (NEC)
  • 2SC5193 - NPN TRANSISTOR (NEC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5198 isc website：www.iscsemi.
Published: |