Datasheet Details
| Part number | 2SC5239 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.37 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5239-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5239.
| Part number | 2SC5239 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.37 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5239-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1.5 A 50 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5239 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5239 | NPN TRANSISTOR | Sanken electric |
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2SC5239 | SILICON POWER TRANSISTOR | SavantIC |
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