Inchange Semiconductor 2SC5271
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC5271 |
|---|---|
| Datasheet | 2SC5271 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)●Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2.5A, IB= 0.5A)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for resonant switching regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous 2.0 A PT Total Power Dissipation @TC=25℃ 30 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SC5271 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VB...