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2SC5271 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2.5A, IB= 0.5A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for resonant switching regulator and general pu

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2.5A, IB= 0.5A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for resonant switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous 2.0 A PT Total Power Dissipation @TC=25℃ 30 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SC5271 isc website：www.iscsemi.