Datasheet Details
| Part number | 2SC5299 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5299-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC5299.
| Part number | 2SC5299 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5299-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 3.0 W 70 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5299 | NPN TRANSISTOR | Sanyo Semicon Device |
 |
2SC5299 | SILICON POWER TRANSISTOR | SavantIC |
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