Inchange Semiconductor 2SC5353
Silicon NPN Transistor
| Part No. | 2SC5353 |
|---|---|
| Datasheet | 2SC5353 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.)●Low Collector Saturation Voltage : VCE(sat) =1V(Max) @ IC= 1.2A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in lighting applications and low cost switch-mode power supplies .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-peak tp<5ms 5 A IB Base Current-Continuous Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Ti Junction Temperature 1 A 25 W 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5353ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector -Base Breakdown Voltage IC= 1...