Inchange Semiconductor 2SC5382
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC5382 |
|---|---|
| Datasheet | 2SC5382 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 550V(Min)●High Switching Speed
●Low Collector Saturation Voltage
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 12 A IB Base Current-Continuous 3 A IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.13 ℃/W isc Website： 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SC5382ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
