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2SC5622 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage High Switching Speed Low Saturation Voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABS

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Datasheet Details

Part number 2SC5622
Manufacturer INCHANGE
File Size 185.06 KB
Description NPN Transistor
Datasheet download datasheet 2SC5622 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5622 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 6 A ICM Collector Current- Continuous 12 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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