2SC5696 Overview
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=7.2A; IB= 1.8A VBE(sat) Base-Emitter Saturation Voltage IC=7.2A;.
NPN Transistor
| Part number | 2SC5696 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.78 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5696-INCHANGE.pdf |
|
|
|
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=7.2A; IB= 1.8A VBE(sat) Base-Emitter Saturation Voltage IC=7.2A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
2SC5696 | NPN Triple Diffused Planar Silicon Transistor | Sanyo |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC5694 | NPN Transistor |
| 2SC5622 | NPN Transistor |
| 2SC5689 | NPN Transistor |
| 2SC5002 | NPN Transistor |
| 2SC5006 | NPN Transistor |
| 2SC5042 | NPN Transistor |
| 2SC5043 | NPN Transistor |
| 2SC5065 | NPN Transistor |
| 2SC5071 | NPN Transistor |
| 2SC508 | NPN Transistor |