2SC5696 Description
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=400mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=7.2A; IB= 1.8A VBE(sat) Base-Emitter Saturation Voltage IC=7.2A;.
- Part: 2SC5696
- Manufacturer: Inchange Semiconductor (official site)
- Size: 184.78 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
SANYO |
2SC5696 | NPN Triple Diffused Planar Silicon Transistor |