2SC5900 Datasheet PDF

DESCRIPTION

●High Breakdown Voltage- : VCBO= 1700V (Min)
●High Switching Speed
●High Reliability

APPLICATIONS

●Color TV horizontal deflection output applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5900

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Col...