Datasheet Details
| Part number | 2SC5902 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5902-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5902.
| Part number | 2SC5902 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5902-INCHANGE.pdf |
|
|
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·High Breakdown Voltage ·Built-in damper diode type ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 9 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5902 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5902 | NPN Transistor | Panasonic Semiconductor |
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