Inchange Semiconductor 2SC5902
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC5902 |
|---|---|
| Datasheet | 2SC5902 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage●Built-in damper diode type
●High Switching Speed
●Wide Area of Safe Operation
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high voltage color display horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 9 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5902ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.13A VBE(sat) Base-Emitter Saturation Voltage I...