2SC5993 Description
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 180 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.
2SC5993 is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC5993 | Silicon NPN Transistor |
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 180 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.