Datasheet Details
| Part number | 2SC5993 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.88 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5993-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5993.
| Part number | 2SC5993 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.88 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5993-INCHANGE.pdf |
|
|
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·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SA2140 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplification ·For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3.0 A 2.0 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5993 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 180 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5993 | Silicon NPN Transistor | Panasonic Semiconductor |
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