Download 2SC5993 Datasheet PDF
Inchange Semiconductor
2SC5993
DESCRIPTION - Good Linearity of h FE - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) - plement to Type 2SA2140 - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Power amplification - For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature 2.0 W ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power...