Inchange Semiconductor 2SC6017
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC6017 |
|---|---|
| Datasheet | 2SC6017 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Large current capacitance●High-speed switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●Complementary to 2SA2169
APPLICATIONS
●Relay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 13 A 20 W 0.95 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 250mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 250mA V(BR)CEO Collector-Emitter Voltage...
