Datasheet Details
| Part number | 2SC6082 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.22 KB |
| Description | TO-220F NPN Transistor |
| Datasheet | 2SC6082-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6082.
| Part number | 2SC6082 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.22 KB |
| Description | TO-220F NPN Transistor |
| Datasheet | 2SC6082-INCHANGE.pdf |
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·Large current capacitance ·High speed switching ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A IB Base Current- Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 2 W 23 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6082 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A;
IB= 0.375A VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC6082 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC6082 | Bipolar Transistor | ON Semiconductor |
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