2SC789
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= 1.5(V)(Max)@ IC= 3A
- DC Current Gain-
: h FE= 40-240 @ IC= 0.5A
- plement to Type 2SA489
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base current- Continuous
Total Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC789 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
