Datasheet4U Logo Datasheet4U.com

2SC789 - NPN Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage- : VCE(sat)= 1.5(V)(Max)@ IC= 3A DC Current Gain- : hFE= 40-240 @ IC= 0.5A Complement to Type 2SA489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

📥 Download Datasheet

Datasheet preview – 2SC789

Datasheet Details

Part number 2SC789
Manufacturer INCHANGE
File Size 213.79 KB
Description NPN Transistor
Datasheet download datasheet 2SC789 Datasheet
Additional preview pages of the 2SC789 datasheet.

📁 Similar Datasheet

  • 2SC789 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC781 - NPN SILICON EPITAXIAL TRANSISTOR (ETC)
  • 2SC782 - SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR (ETC)
  • 2SC783 - SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR (ETC)
  • 2SC784 - Silicon NPN Transistor (Toshiba)
  • 2SC785 - Silicon NPN Transistor (Toshiba)
  • 2SC787 - Silicon NPN Transistor (ETC)
  • 2SC710 - Small Signal Transistor (Mitsubishi)
  • 2SC717 - Silicon NPN Epitaxial Type Transistor (ETC)
  • 2SC730 - NPN TRANSISTOR (Mitsubishi Electric Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5(V)(Max)@ IC= 3A ·DC Current Gain- : hFE= 40-240 @ IC= 0.5A ·Complement to Type 2SA489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC789 isc website：www.iscsemi.
Published: |