2SC789 - NPN Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 1.5(V)(Max)@ IC= 3A DC Current Gain- : hFE= 40-240 @ IC= 0.5A Complement to Type 2SA489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

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2SC789 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC789
Manufacturer	Inchange Semiconductor
File Size	213.79 KB
Description	NPN Transistor
Datasheet	2SC789 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5(V)(Max)@ IC= 3A ·DC Current Gain- : hFE= 40-240 @ IC= 0.5A ·Complement to Type 2SA489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC789 isc website：www.iscsemi.