Datasheet4U Logo Datasheet4U.com

2SC9014 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High total power dissipation ·High hFE and good linearity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ Ta<50℃ J Junction Temperature Tstg Storage Temperature Range INCHANGE Semiconductor 2SC9014 VALUE 50 45 5 0.1 0.45 -55~150 -55~150 UNIT V V V A W ℃ ℃ isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC9014 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-base breakdown Voltage IC= 100uA;

IE= 0 VEBO VCE(sat) VBE(sat) VBE(on) Emitter-base breakdown Voltage IE= 100uA;

IC= 0 Collector-Emitter Saturation Voltage IC= 100mA;

2SC9014 Distributor