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2SC9014 - NPN Transistor

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Description

High total power dissipation High hFE and good linearity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage V

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Datasheet Details

Part number 2SC9014
Manufacturer INCHANGE
File Size 218.55 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High total power dissipation ·High hFE and good linearity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ Ta<50℃ J Junction Temperature Tstg Storage Temperature Range INCHANGE Semiconductor 2SC9014 VALUE 50 45 5 0.1 0.45 -55~150 -55~150 UNIT V V V A W ℃ ℃ isc website：www.iscsemi.
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