Datasheet Details
| Part number | 2SD1025 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1025-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1025.
| Part number | 2SD1025 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1025-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpoe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous 0.5 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
Compare 2SD1025 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1025 | Darlington Transistor | Shindengen Electric Mfg.Co.Ltd |
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2SD1025 | SILICON POWER TRANSISTOR | SavantIC |
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