Inchange Semiconductor 2SD1071
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1071 |
|---|---|
| Datasheet | 2SD1071 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●High DC Current Gain
●High Reliability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio power amplifiers●Relay & solenoid drivers
●Motor controls
●General purpose power amplifiers
●Including zener diode
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO(SUS) Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V VZ Zener Voltage 300 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VZ Zener Voltage IZ= 0.1mA V(BR...