Datasheet Details
| Part number | 2SD1072 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1072-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1072 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1072-INCHANGE.pdf |
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·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO(SUS) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 350 V 20 V 5 A 0.3 A 60 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1072 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
IE= 0 450 V VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1072 | Power Transistor | Fuji Electric |
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