Datasheet Details
| Part number | 2SD1133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1133-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1133-INCHANGE.pdf |
|
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·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·plement to Type 2SB857 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1133 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD1133 | NPN TRANSISTOR | Hitachi Semiconductor |
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2SD1133 | (2SD1133 / 2SD1134) SILICON POWER TRANSISTOR | SavantIC |
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2SD1133 | Silicon NPN Transistor | Renesas |
| Part Number | Description |
|---|---|
| 2SD113 | NPN Transistor |
| 2SD1134 | NPN Transistor |
| 2SD1135 | NPN Transistor |
| 2SD1136 | NPN Transistor |
| 2SD1137 | NPN Transistor |
| 2SD1138 | NPN Transistor |
| 2SD1139 | NPN Transistor |
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1114 | NPN Transistor |