Datasheet Details
| Part number | 2SD1158 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1158-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1158.
| Part number | 2SD1158 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1158-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operati APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.25 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1158 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1158 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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