Inchange Semiconductor 2SD1173
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1173 |
|---|---|
| Datasheet | 2SD1173 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1500V (Min)●Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 3.0A
●Built-in Damper Diode
●Wide area of safe operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 70 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1173ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Em...