Datasheet Details
| Part number | 2SD1204 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1204-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1204 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1204-INCHANGE.pdf |
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·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current 15 ICM Collector Current-peak 30 IB Base Current 1 PC Collector Power Dissipation @TC=25℃ 100 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1204 MIN TYP MAX UNIT VBCEO(SUS) Collector-Emitter Sustaining Voltage I = CB B 50mA;
I = BB B 0 400 V VBCE(sat)-1 Collector-Emitter Saturation Voltage I = CB B 8 A;
I = BB B 100mA 1.6 V VBCE(sat)-2 Collector-Emitter Saturation Voltage I = CB B 10 A;
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