2SD1255
2SD1255 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 3.0A
- Fast Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
- Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
℃
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
