| Part number | 2SD1255 |
|---|---|
| Datasheet | 2SD1255-INCHANGE.pdf |
| File Size | 218.20 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1255 | NPN Transistors | Kexin |
 |
2SD1255 | Silicon NPN Transistor | Panasonic Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1202 | NPN Transistor |
| 2SD1204 | NPN Transistor |
| 2SD1210 | NPN Transistor |
| 2SD1212 | NPN Transistor |
| 2SD1213 | NPN Transistor |
| 2SD1223 | NPN Transistor |
| 2SD1229 | NPN Transistor |
| 2SD1230 | Silicon NPN Darlington Power Transistor |
| 2SD1235 | NPN Transistor |
| 2SD1236 | NPN Transistor |
