Datasheet Details
| Part number | 2SD1290 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.81 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1290-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1290 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.81 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1290-INCHANGE.pdf |
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·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 50 W 130 ℃ Tstg Storage Temperature Range -55-130 ℃ 2SD1290 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1290 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1290 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1291 | NPN Transistor |
| 2SD1294 | NPN Transistor |
| 2SD1296 | NPN Transistor |
| 2SD1297 | NPN Transistor |
| 2SD1202 | NPN Transistor |
| 2SD1204 | NPN Transistor |
| 2SD1210 | NPN Transistor |
| 2SD1212 | NPN Transistor |
| 2SD1213 | NPN Transistor |
| 2SD1223 | NPN Transistor |