Datasheet4U Logo Datasheet4U.com

2SD1294 - NPN Transistor

General Description

Included Avalanche Diode- : VZ= 60±15V High DC Current Gain : hFE= 2000~20000@ IC= 0.5A, VCE= 5V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power regulator for line operated TV applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1294 NPN Transistor Toshiba Semiconductor
2SD1294 SILICON POWER TRANSISTOR SavantIC
2SD129 (2SD129 / 2SD130) Silicon NPN Transistor ETC
2SD1290 SILICON POWER TRANSISTOR SavantIC
2SD1291 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1290 NPN Transistor
2SD1291 NPN Transistor
2SD1296 NPN Transistor
2SD1297 NPN Transistor
2SD1202 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Included Avalanche Diode- : VZ= 60±15V ·High DC Current Gain : hFE= 2000~20000@ IC= 0.5A, VCE= 5V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60±15 V VCEO Collector-Emitter Voltage 60±15 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1294 isc website：www.iscsemi.