Datasheet Details
| Part number | 2SD1294 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.06 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1294-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1294 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.06 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1294-INCHANGE.pdf |
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·Included Avalanche Diode- : VZ= 60±15V ·High DC Current Gain : hFE= 2000~20000@ IC= 0.5A, VCE= 5V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power regulator for line operated TV applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60±15 V VCEO Collector-Emitter Voltage 60±15 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1294 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
Compare 2SD1294 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1294 | NPN Transistor | Toshiba Semiconductor |
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2SD1294 | SILICON POWER TRANSISTOR | SavantIC |
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