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2SD1297 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor 2SD1297.

General Description

·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current- Continuous Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 1.5 A 100 W 3.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1297 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 30mA VBE(sat) Base-Emitter Saturation Voltage IC= 15A ,IB= 30mA ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 8V;

IC= 0 hFE-1 DC Current Gain IC= 15A ;

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