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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 4.0A ·Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2A, IB= 0.1A ·Good Linearity of hFE ·Complement to Type 2SB986 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power supplies, relay drivers, lamp drivers,
electrical equipment applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
1.