Datasheet4U Logo Datasheet4U.com

2SD1391 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

Datasheet preview – 2SD1391

Datasheet Details

Part number 2SD1391
Manufacturer INCHANGE
File Size 208.10 KB
Description NPN Transistor
Datasheet download datasheet 2SD1391 Datasheet
Additional preview pages of the 2SD1391 datasheet.

📁 Similar Datasheet

  • 2SD1391 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1390 - Power Transistor (Inchange Semiconductor)
  • 2SD1392 - NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR (ETC)
  • 2SD1395 - NPN Triple Diffused Planar Silicon Darlington Transistor (Sanyo Semicon Device)
  • 2SD1396 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1397 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1398 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1399 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1302 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1303 - NPN Transistor (SEMTECH)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |