Inchange Semiconductor 2SD1391
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1391 |
|---|---|
| Datasheet | 2SD1391 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1500V (Min)●High Reliability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for line-operated horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 hFE DC Current Gain IC= 4A; VCE= 10V tf Fall Time tstg Storage Time IC= 4A, IBend= 1.5A, LB= 10μH 2SD1391 MIN TYP.