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2SD1395 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 2.5A Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pur

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Datasheet Details

Part number 2SD1395
Manufacturer INCHANGE
File Size 200.50 KB
Description NPN Transistor
Datasheet download datasheet 2SD1395 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2.5A ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
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