Datasheet Details
| Part number | 2SD1395 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1395-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1395 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1395-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2.5A ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A, IB= 5mA MIN TYP.
MAX UNIT 50 V 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A, IB= 5mA 2.0 V ICBO Collector Cutoff Current VCB= 50V, IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 50V, IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1395 | NPN Triple Diffused Planar Silicon Darlington Transistor | Sanyo Semicon Device |
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