2SD1425 Description
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1425 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;.