| Part number | 2SD1425 |
|---|---|
| Datasheet | 2SD1425-INCHANGE.pdf |
| File Size | 185.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1425 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1425 | Silicon NPN Transistor | Toshiba |
 |
2SD1425 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1426 | NPN Transistor |
| 2SD1427 | NPN Transistor |
| 2SD1428 | NPN Transistor |
| 2SD1429 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |
