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2SD1439 - NPN Transistor

Datasheet Summary

Description

High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

colour TV receivers.

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Datasheet Details

Part number 2SD1439
Manufacturer INCHANGE
File Size 210.98 KB
Description NPN Transistor
Datasheet download datasheet 2SD1439 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak 10 A IBP Base Current- Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 3.5 A 50 W 2.5 130 ℃ Tstg Storage Temperature Range -55-130 ℃ isc website：www.iscsemi.
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