Datasheet4U Logo Datasheet4U.com

2SD1455 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV horizontal deflection output applications.

📥 Download Datasheet

Datasheet preview – 2SD1455

Datasheet Details

Part number 2SD1455
Manufacturer INCHANGE
File Size 208.94 KB
Description NPN Transistor
Datasheet download datasheet 2SD1455 Datasheet
Additional preview pages of the 2SD1455 datasheet.

📁 Similar Datasheet

  • 2SD1455 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1450 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1451 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1452 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1453 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1454 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1456 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1457 - Silicon NPN triple diffusion Transistor (Panasonic Semiconductor)
  • 2SD1457 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1457A - Silicon NPN triple diffusion Transistor (Panasonic Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1455 isc website：www.iscsemi.
Published: |