On-chip C-to-B Zener diode for surge voltage absorption
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1A
High DC Current Gain
: hFE= 2000(Min) @IC= 1A
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operat
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1481
DESCRIPTION ·On-chip C-to-B Zener diode for surge voltage absorption ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain
: hFE= 2000(Min) @IC= 1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency amplifiers and low speed
switching applications.
2SD1481 Datasheet
