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2SD1481 - NPN Transistor

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Description

On-chip C-to-B Zener diode for surge voltage absorption Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A High DC Current Gain : hFE= 2000(Min) @IC= 1A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operat

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Datasheet Details

Part number 2SD1481
Manufacturer INCHANGE
File Size 205.36 KB
Description NPN Transistor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 DESCRIPTION ·On-chip C-to-B Zener diode for surge voltage absorption ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 2000(Min) @IC= 1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency amplifiers and low speed switching applications.
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