Datasheet Details
| Part number | 2SD1497 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.17 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1497-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1497 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.17 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1497-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1497 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1497 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1492 | NPN Transistor |
| 2SD1496 | NPN Transistor |
| 2SD1499 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |
| 2SD1407 | NPN Transistor |