Datasheet Details
| Part number | 2SD1505 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.25 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1505-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1505 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.25 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1505-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·Wide Area of Safe Operation ·Complement to Type 2SB1064 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1505 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1505 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1505 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1503 | NPN Transistor |
| 2SD1506 | NPN Transistor |
| 2SD1510 | NPN Transistor |
| 2SD1514 | NPN Transistor |
| 2SD1515 | NPN Transistor |
| 2SD1522 | NPN Transistor |
| 2SD1523 | NPN Transistor |
| 2SD1524 | NPN Transistor |
| 2SD1532 | NPN Transistor |
| 2SD1535 | NPN Transistor |