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2SD1559 - NPN Transistor

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Description

High DC Current Gain : hFE= 1000(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Complement to Type 2SB1079 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency

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Datasheet Details

Part number 2SD1559
Manufacturer INCHANGE
File Size 215.98 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1559 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type 2SB1079 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
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