2SD1559
DESCRIPTION
- High DC Current Gain
: h FE= 1000(Min.)@ IC= 10A, VCE= 3V
- High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
- plement to Type 2SB1079
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
