Datasheet Details
| Part number | 2SD1563A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.95 KB |
| Description | NPN Transistor |
| Download | 2SD1563A Download (PDF) |
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| Part number | 2SD1563A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.95 KB |
| Description | NPN Transistor |
| Download | 2SD1563A Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 10 W 1.2 150 Tstg Storage Temperature Range -55~150 ℃ 2SD1563A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1563A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1563A | SILICON POWER TRANSISTOR | SavantIC |
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