Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
- High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifiers and low speed switching...
