Datasheet Details
| Part number | 2SD1565 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.66 KB |
| Description | NPN Transistor |
| Download | 2SD1565 Download (PDF) |
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| Part number | 2SD1565 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.66 KB |
| Description | NPN Transistor |
| Download | 2SD1565 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1565 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
isc Silicon NPN Darlington Power Transistor 2SD1565.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1565 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1562 | NPN Transistor |
| 2SD1563 | NPN Transistor |
| 2SD1563A | NPN Transistor |
| 2SD1564 | NPN Transistor |
| 2SD1566 | NPN Transistor |
| 2SD1503 | NPN Transistor |
| 2SD1505 | NPN Transistor |
| 2SD1506 | NPN Transistor |
| 2SD1510 | NPN Transistor |
| 2SD1514 | NPN Transistor |