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2SD1592 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1592 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.