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2SD1594 - NPN Transistor

Datasheet Summary

Description

Good Linearity of hFE Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed switching industrial use.

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Datasheet Details

Part number 2SD1594
Manufacturer INCHANGE
File Size 211.79 KB
Description NPN Transistor
Datasheet download datasheet 2SD1594 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1594 isc website：www.
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