Good Linearity of hFE
Collector-Emitter Breakdown Voltage
: V(BR)CEO= 100V(Min)
Low Collector Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3.5
A
1.5 W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1594
isc website：www.
2SD1594 Datasheet
