Datasheet Details
| Part number | 2SD1634 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.53 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1634-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1634.
| Part number | 2SD1634 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.53 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1634-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1634 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1634 | SILICON POWER TRANSISTOR | SavantIC |
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